1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體