16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

文件：1.2125 Mbytes 頁數(shù)：58 Pages

NUMONYX

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

文件：492.81 Kbytes 頁數(shù)：56 Pages

STMICROELECTRONICS

意法半導(dǎo)體

16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout

Description The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page

文件：1.2125 Mbytes 頁數(shù)：58 Pages

NUMONYX

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

文件：492.81 Kbytes 頁數(shù)：56 Pages

STMICROELECTRONICS

意法半導(dǎo)體

16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout

Description The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page

文件：492.81 Kbytes 頁數(shù)：56 Pages

STMICROELECTRONICS

意法半導(dǎo)體