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          首頁 >M25PE20>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          M25PE20

          1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

          文件:1.23015 Mbytes 頁數(shù):64 Pages

          NUMONYX

          M25PE20

          1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

          文件:480.74 Kbytes 頁數(shù):37 Pages

          STMICROELECTRONICS

          意法半導體

          M25PE20-VMN6G

          1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

          文件:1.23015 Mbytes 頁數(shù):64 Pages

          NUMONYX

          M25PE20-VMN6P

          1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

          文件:1.23015 Mbytes 頁數(shù):64 Pages

          NUMONYX

          M25PE20-VMN6TG

          1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

          文件:1.23015 Mbytes 頁數(shù):64 Pages

          NUMONYX

          M25PE20-VMN6TG

          1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

          文件:480.74 Kbytes 頁數(shù):37 Pages

          STMICROELECTRONICS

          意法半導體

          M25PE20-VMN6TP

          1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

          文件:480.74 Kbytes 頁數(shù):37 Pages

          STMICROELECTRONICS

          意法半導體

          M25PE20-VMN6TP

          1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

          文件:1.23015 Mbytes 頁數(shù):64 Pages

          NUMONYX

          M25PE20-VMP6G

          1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

          文件:1.23015 Mbytes 頁數(shù):64 Pages

          NUMONYX

          M25PE20-VMP6P

          1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

          Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

          文件:1.23015 Mbytes 頁數(shù):64 Pages

          NUMONYX

          技術(shù)參數(shù)

          • Density:

            2Mb

          • FBGA Code:

            N/A

          • Op. Temp.:

            -40C to +85C

          • Part Family:

            M25PE

          • Part Status:

            Production

          • PLP:

            No

          • PLP Start Date:

            N/A

          • Type:

            Page Erase

          • Width:

            x1

          供應(yīng)商型號品牌批號封裝庫存備注價格
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          NUM
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          更多M25PE20供應(yīng)商 更新時間2026-1-21 15:42:00
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