Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

M14C16 Die Description

ST

意法半導(dǎo)體