Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

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Memory Micromodules General Information for D1, D2 and C Packaging

DESCRIPTION Memory Cards consist of two main parts: the plastic card, and the embedded Micromodule (which, in turn, carries the silicon chip). ■ Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: – Support for the chi

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M14C16 Die Description

Pad locations are measured relative to the die centre (where X and Y are respectively the horizontal and vertical axis, measured in μm). PRODUCT M14C16 ■ WAFER SIZE 152 mm (6 inches) ■ DIE IDENTIFICATION M14C16KA_R ■ DIE SIZE (X x Y) 1390 x 2375 μm ■ SCRIBE LINE 101.8 x 102.4 μm ■ PAD OPENIN

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Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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Memory Card IC 16/4 Kbit Serial I?C Bus EEPROM

DESCRIPTION Each device is an electrically erasable program mable memory (EEPROM) fabricated with STMi croelectronics’s High Endurance, Single Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 40 years. The m

文件：108.62 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

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