2W Power PHEMT

DESCRIPTION AND APPLICATIONS\nThe LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 μm by 3000 μm Schottky barrier gate. The recessed “mushroom” gate structure minimiz ? +33.5 dBm Typical Power at 18 GHz\n? 7 dB Typical Power Gain at 18 GHz\n? +30.5 dBm at 3.3V Battery Voltage\n? Low Intermodulation Distortion\n? 45% Power-Added-Efficiency at 18 GHz;

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PACKAGED 2W POWER PHEMT

● DESCRIPTION AND APPLICATIONS\nThe LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mu ?? ? 33 dBm Output Power at 1-dB Compression at 15 GHz\n?? ? 8 dB Power Gain at 15 GHz\n?? ? 60% Power-Added Efficiency;

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LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

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Package：HC-49/US；包裝：卷帶（TR） 類別：晶體，振蕩器，諧振器 晶體 描述：CRYSTAL 30.0000MHZ 18PF SMD

CTS-Frequency Controls

Package：HC-49/US；包裝：卷帶（TR） 類別：晶體，振蕩器，諧振器 晶體 描述：CRYSTAL 30.0000MHZ 20PF SMD

CTS-Frequency Controls