| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PACKAGED 2W POWER PHEMT ● DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “ 文件:47.9 Kbytes 頁數(shù):3 Pages | FILTRONIC | FILTRONIC | ||
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT ● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed 文件:44.15 Kbytes 頁數(shù):3 Pages | FILTRONIC | FILTRONIC | ||
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT ● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed 文件:44.15 Kbytes 頁數(shù):3 Pages | FILTRONIC | FILTRONIC | ||
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT ● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed 文件:44.15 Kbytes 頁數(shù):3 Pages | FILTRONIC | FILTRONIC | ||
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT ● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed 文件:44.15 Kbytes 頁數(shù):3 Pages | FILTRONIC | FILTRONIC | ||
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT ● DESCRIPTION AND APPLICATIONS\nThe LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “m ?? ? 29 dBm Output Power at 1-dB Compression at 1.8 GHz\n?? ? 15 dB Power Gain at 1.8 GHz\n?? ? 1.3 dB Noise Figure\n?? ? 46 dBm Output IP3 at 1.8 GHz\n?? ? 55% Power-Added Efficiency; | Filtronic | Filtronic | ||
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT | Filtronic | Filtronic | ||
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT | Filtronic | Filtronic |
詳細(xì)參數(shù)
- 型號:
LP3000_
- 制造商:
FILTRONIC
- 制造商全稱:
FILTRONIC
- 功能描述:
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FILTRONIC |
24+ |
SOT89 |
11750 |
詢價 | |||
FILTRONIC |
25+23+ |
SOT89 |
77430 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
FILTRONIC |
19+ |
SOT89 |
20000 |
36256 |
詢價 | ||
FILTRONIC |
24+ |
SOT89 |
20000 |
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅!! |
詢價 | ||
FILTRONIC |
24+ |
SOT89 |
18560 |
假一賠十全新原裝現(xiàn)貨特價供應(yīng)工廠客戶可放款 |
詢價 | ||
FILTRONIC |
26+ |
PLCC |
86720 |
全新原裝正品價格最實惠 承諾假一賠百 |
詢價 | ||
FIL |
23+24 |
SOT89 |
28950 |
專營原裝正品SMD二三極管,電源IC |
詢價 | ||
FILTRONIC |
25+ |
SOT89 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
POWER |
23+ |
SOP |
6000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
LAONG |
2022+ |
SOT-23 |
900 |
原廠代理 終端免費提供樣品 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
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