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    首頁(yè) >LP1>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    LP1084IZ

    LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

    文件:962.27 Kbytes 頁(yè)數(shù):13 Pages

    FCI

    富加宜

    LP1085

    LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

    文件:962.27 Kbytes 頁(yè)數(shù):13 Pages

    FCI

    富加宜

    LP1085CM

    LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

    文件:962.27 Kbytes 頁(yè)數(shù):13 Pages

    FCI

    富加宜

    LP1085CZ

    LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

    文件:962.27 Kbytes 頁(yè)數(shù):13 Pages

    FCI

    富加宜

    LP1085IZ

    LOW DROPOUT POSITVITE ADJUSTABLE REGULATOR

    文件:962.27 Kbytes 頁(yè)數(shù):13 Pages

    FCI

    富加宜

    LP124

    Micropower Quad Operational Amplifier

    General Description The LP124 series consists of four independent, high gain internally compensated micropower operational amplifiers. These amplifiers are specially suited for operation in battery systems while maintaining good input specifications, and extremely low supply current drain. In a

    文件:230.02 Kbytes 頁(yè)數(shù):10 Pages

    NSC

    國(guó)半

    LP124J

    Micropower Quad Operational Amplifier

    General Description The LP124 series consists of four independent, high gain internally compensated micropower operational amplifiers. These amplifiers are specially suited for operation in battery systems while maintaining good input specifications, and extremely low supply current drain. In a

    文件:230.02 Kbytes 頁(yè)數(shù):10 Pages

    NSC

    國(guó)半

    LP1500

    1W POWER PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 1500 mm Schottky barrier gate. The recessed “mushroom” gate structure

    文件:40.31 Kbytes 頁(yè)數(shù):2 Pages

    FILTRONIC

    LP1500P100

    PACKAGED 1W POWER PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

    文件:48.46 Kbytes 頁(yè)數(shù):3 Pages

    FILTRONIC

    LP1500SOT223

    Low Noise, High Linearity Packaged PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 μm by 1500 μm Schottky barrier gate. The recessed “mushroom” g

    文件:69.83 Kbytes 頁(yè)數(shù):2 Pages

    FILTRONIC

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    LG
    25+
    ???
    5000
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
    詢價(jià)
    LOWPOWER(微源半導(dǎo)體)
    25+
    封裝
    500000
    源自原廠成本,高價(jià)回收工廠呆滯
    詢價(jià)
    LP
    2447
    RJ45
    100500
    一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
    詢價(jià)
    LINK-PP
    2450+
    SMD/RJ45
    9850
    只做原裝正品現(xiàn)貨或訂貨假一賠十!
    詢價(jià)
    cosonic
    24+
    N/A
    6980
    原裝現(xiàn)貨,可開(kāi)13%稅票
    詢價(jià)
    cosonic
    2023+
    原廠封裝
    50000
    原裝現(xiàn)貨
    詢價(jià)
    FREESCALE
    25+
    BGA
    1860
    現(xiàn)貨
    詢價(jià)
    COMMASIC
    23+
    BGA
    13000
    原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
    詢價(jià)
    ST
    23+
    TO252
    7000
    絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
    詢價(jià)
    ST
    23+
    to252
    16900
    正規(guī)渠道,只有原裝!
    詢價(jià)
    更多LP1供應(yīng)商 更新時(shí)間2026-1-22 9:08:00

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