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    首頁 >LP1500>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    LP1500

    1W POWER PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 1500 mm Schottky barrier gate. The recessed “mushroom” gate structure

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    LP1500

    1W POWER PHEMT

    DESCRIPTION AND APPLICATIONS\nThe LP1500 is an Aluminum Gallium? Arsenide / Indium Gallium? Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25? mm by 1500? mm? Schottky barrier gate. The recessed “mushroom” gate structure min ¨? 31.5 dBm Output Power at 1-dB Compression at 18 GHz\n¨? 8 dB Power Gain at 18 GHz\n¨? 28 dBm Output Power at 1-dB Compression at 3.3V\n¨? 45dBm Output IP3 at 18GHz\n¨? 50% Power-Added Efficiency;

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    LP1500P100

    PACKAGED 1W POWER PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

    文件:48.46 Kbytes 頁數(shù):3 Pages

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    LP1500SOT223

    Low Noise, High Linearity Packaged PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 μm by 1500 μm Schottky barrier gate. The recessed “mushroom” g

    文件:69.83 Kbytes 頁數(shù):2 Pages

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    LP1500SOT2231

    Low Noise, High Linearity Packaged PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 μm by 1500 μm Schottky barrier gate. The recessed “mushroom” g

    文件:69.83 Kbytes 頁數(shù):2 Pages

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    LP1500SOT2232

    Low Noise, High Linearity Packaged PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 μm by 1500 μm Schottky barrier gate. The recessed “mushroom” g

    文件:69.83 Kbytes 頁數(shù):2 Pages

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    LP1500SOT2233

    Low Noise, High Linearity Packaged PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 μm by 1500 μm Schottky barrier gate. The recessed “mushroom” g

    文件:69.83 Kbytes 頁數(shù):2 Pages

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    LP1500SOT89

    LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

    DESCRIPTION AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mmx1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recesse

    文件:44.11 Kbytes 頁數(shù):3 Pages

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    LP1500P100

    PACKAGED 1W POWER PHEMT

    DESCRIPTION AND APPLICATIONS\nThe LP1500P100 is a packaged Aluminum Gallium? Arsenide / Indium Gallium? Arsenide (AlGaAs/InGaAs)? pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mu ¨? 31dBm Output Power at 1-dB Compression at 15 GHz\n¨? 9 dB Power Gain at 15 GHz\n¨? 42 dBm Output IP3 at 15GHz\n¨? 60% Power-Added Efficiency;

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    LP1500SC

    半導(dǎo)體放電管

    LRC

    樂山無線電

    技術(shù)參數(shù)

    • RatedVoltage(V):

      200V

    • DφxL(mm):

      35x42

    • Temperature:

      85℃

    • LoadLife(Hours):

      2000

    供應(yīng)商型號品牌批號封裝庫存備注價格
    FILTRONIC
    24+
    SOT89
    11733
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    更多LP1500供應(yīng)商 更新時間2026-1-23 10:03:00

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