| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 頁(yè)數(shù):47 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 頁(yè)數(shù):47 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 頁(yè)數(shù):47 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 頁(yè)數(shù):47 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 頁(yè)數(shù):47 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 頁(yè)數(shù):47 Pages | TI 德州儀器 | TI | ||
絲印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 頁(yè)數(shù):47 Pages | TI 德州儀器 | TI | ||
絲印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers 1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 頁(yè)數(shù):47 Pages | TI 德州儀器 | TI | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup 文件:250.11 Kbytes 頁(yè)數(shù):14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印:LF356N;Package:PDIP(P);LFx5x JFET Input Operational Amplifiers 1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D 文件:2.10242 Mbytes 頁(yè)數(shù):47 Pages | TI 德州儀器 | TI |
替換型號(hào)
技術(shù)參數(shù)
- Rail-to-rail:
In to V+
- GBW (Typ) (MHz):
5
- Slew rate (Typ) (V/us):
12
- Vos (offset voltage @ 25 C) (Max) (mV):
10
- Iq per channel (Typ) (mA):
5
- Vn at 1 kHz (Typ) (nV/rtHz):
12
- Rating:
Catalog
- Operating temperature range (C):
0 to 70
- Offset drift (Typ) (uV/C):
3
- Features:
—
- Input bias current (Max) (pA):
8000
- CMRR (Typ) (dB):
100
- Output current (Typ) (mA):
25
- Architecture:
FET
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
25+ |
9000 |
公司現(xiàn)貨庫(kù)存 |
詢價(jià) | ||||
TI |
24+ |
DIP8-SOP8 |
130531 |
全新原裝正品!現(xiàn)貨庫(kù)存!可開13點(diǎn)增值稅發(fā)票 |
詢價(jià) | ||
NS |
24+ |
SOP-8 |
8000 |
只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ST |
23+ |
SO-8 |
7000 |
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
ON |
10+ |
DIP-8 |
7800 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
NS |
04+ |
2000 |
詢價(jià) | ||||
24+ |
DIP-8 |
6000 |
詢價(jià) | ||||
25+ |
SMDDIP |
5000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | |||
NS |
CAN |
1251 |
柜臺(tái)A1盒 |
詢價(jià) | |||
NS |
2013 |
DIP8 |
200 |
全新 |
詢價(jià) |
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