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          首頁 >LF3>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          LF356M/NOPB

          絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

          1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

          文件:2.10242 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          LF356M/NOPB.B

          絲印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

          1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

          文件:2.10242 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          LF356MSLASHNOPB

          絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

          1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

          文件:2.10242 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          LF356MSLASHNOPB.B

          絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

          1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

          文件:2.10242 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          LF356MX/NOPB

          絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

          1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

          文件:2.10242 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          LF356MX/NOPB.B

          絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

          1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

          文件:2.10242 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          LF356MXSLASHNOPB

          絲?。?a target="_blank" title="Marking" href="/lf356m/marking.html">LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

          1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

          文件:2.10242 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          LF356MXSLASHNOPB.B

          絲印:LF356M;Package:SOIC(D);LFx5x JFET Input Operational Amplifiers

          1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

          文件:2.10242 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          LF356N

          WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

          DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

          文件:250.11 Kbytes 頁數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          LF356N/NOPB

          絲?。?a target="_blank" title="Marking" href="/lf356n/marking.html">LF356N;Package:PDIP(P);LFx5x JFET Input Operational Amplifiers

          1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

          文件:2.10242 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          技術(shù)參數(shù)

          • IAV:

            1

          • IR:

            5

          • TRR:

            150

          • Package:

            eSGB

          • Feature:

            Glass Passivated

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          HGSEMI
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          更多LF3供應(yīng)商 更新時(shí)間2026-1-19 16:06:00
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