Wide bandwidth dual JFET operational amplifiers

DESCRIPTION The LF353 are high speed J–FET input dual operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coef

文件：909.27 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

Wide bandwidth dual JFET operational amplifiers

Features ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation ■ Latch up free operation ■ High slew rate 16 V/μs

文件：908.15 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

Wide bandwidth dual JFET operational amplifiers

Features ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation ■ Latch up free operation ■ High slew rate 16 V/μs

文件：908.15 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導體

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導體

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導體

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導體

LFx5x JFET Input Operational Amplifiers

1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 頁數(shù)：47 Pages

TI

德州儀器

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導體

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導體

LFx5x JFET Input Operational Amplifiers

1 Features 1? Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 頁數(shù)：47 Pages

TI

德州儀器