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          首頁(yè) >LF2>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          LF251

          WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

          DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur

          文件:108.49 Kbytes 頁(yè)數(shù):9 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          LF251

          WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

          DESCRIPTION These circuits are high speed J–FET input singleoperational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temper

          文件:662.12 Kbytes 頁(yè)數(shù):9 Pages

          SYC

          LF251D

          Wide bandwidth single JFET operational amplifiers

          Description These circuits are high speed JFET input single operational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature

          文件:622.28 Kbytes 頁(yè)數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          LF251DT

          Wide bandwidth single JFET operational amplifiers

          Description These circuits are high speed JFET input single operational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature

          文件:622.28 Kbytes 頁(yè)數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          LF251-LF351

          WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

          DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur

          文件:108.49 Kbytes 頁(yè)數(shù):9 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          LF251N

          Wide bandwidth single JFET operational amplifiers

          Description These circuits are high speed JFET input single operational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature

          文件:622.28 Kbytes 頁(yè)數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          LF253

          WIDE BANDWIDTH DUAL J-FET OPERATIONAL AMPLIFIERS

          DESCRIPTION The LF353 are high speed J–FET input dual operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coef

          文件:99.23 Kbytes 頁(yè)數(shù):9 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          LF253

          Wide bandwidth dual JFET operational amplifiers

          Features ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation ■ Latch up free operation ■ High slew rate 16 V/μs

          文件:908.15 Kbytes 頁(yè)數(shù):15 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          LF253

          WIDE BANDWIDTH DUAL J-FET OPERATIONAL AMPLIFIERS

          DESCRIPTION The LF353 are high speed J–FET input dual operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature

          文件:169.02 Kbytes 頁(yè)數(shù):9 Pages

          SYC

          LF253D

          Wide bandwidth dual JFET operational amplifiers

          Features ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation ■ Latch up free operation ■ High slew rate 16 V/μs

          文件:908.15 Kbytes 頁(yè)數(shù):15 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          技術(shù)參數(shù)

          • 輸入電壓:

            250V

          • 額定電流:

            2A

          • 連接方式:

            底座安裝

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          更多LF2供應(yīng)商 更新時(shí)間2026-1-17 16:06:00
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