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    首頁(yè) >L63>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    L6386

    HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

    DESCRIPTION The L6386 is an high-voltage device, manufactured with the BCD ”O(jiān)FF-LINE” technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM

    文件:80.04 Kbytes 頁(yè)數(shù):10 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    L6386AD

    High-voltage high and low side driver

    Description The L6386AD is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The Logic Inputs

    文件:208.31 Kbytes 頁(yè)數(shù):17 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    L6386AD013TR

    High-voltage high and low side driver

    Description The L6386AD is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The Logic Inputs

    文件:208.31 Kbytes 頁(yè)數(shù):17 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    L6386D

    HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

    DESCRIPTION The L6386 is an high-voltage device, manufactured with the BCD ”O(jiān)FF-LINE” technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM

    文件:80.04 Kbytes 頁(yè)數(shù):10 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    L6386E

    High-voltage high and low side driver

    Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

    文件:217.74 Kbytes 頁(yè)數(shù):18 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    L6386ED

    High-voltage high and low side driver

    Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

    文件:217.74 Kbytes 頁(yè)數(shù):18 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    L6386ED013TR

    High-voltage high and low side driver

    Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

    文件:217.74 Kbytes 頁(yè)數(shù):18 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    L6387

    HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

    DESCRIPTION The L6387 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C

    文件:133.22 Kbytes 頁(yè)數(shù):9 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    L6387

    HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

    HIGH VOLTAGE RAIL UP TO 600 V dV/dt IMMUNITY +- 50 V/nsec IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 400 mA SOURCE, 650 mA SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS IN P

    文件:158.36 Kbytes 頁(yè)數(shù):9 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    L6387D

    HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

    DESCRIPTION The L6387 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C

    文件:133.22 Kbytes 頁(yè)數(shù):9 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    技術(shù)參數(shù)

    • Package Type:

      Mold

    • Package Size:

      Φ5mm

    • Total Radiated Power Po(mW):

      12

    • Maximum Forward Current(DC) IF(mA):

      50

    • Maximum Pulse Forward Current IFP(mA):

      100

    • Viewing Half Angle Θ1/2(degree):

      3

    • Forward Current IF(mA):

      20

    • Wavelength λp(nm):

      630

    • Half Width ?λ(nm):

      15

    • Output Power:

      standard

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    25+
    SOT5
    3629
    原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來(lái)電!
    詢價(jià)
    原裝ST
    24+
    SOP8
    5000
    全現(xiàn)原裝公司現(xiàn)貨
    詢價(jià)
    TI
    16+
    SOP8
    95
    原裝正品老板王磊+13925678267
    詢價(jià)
    ST(意法)
    23+
    SO-14
    15000
    專業(yè)幫助客戶找貨 配單,誠(chéng)信可靠!
    詢價(jià)
    SGS-THOMSON
    24+
    PLCC
    37500
    原裝正品現(xiàn)貨,價(jià)格有優(yōu)勢(shì)!
    詢價(jià)
    KINGBR
    24+
    SMD
    324554
    原裝進(jìn)口現(xiàn)貨
    詢價(jià)
    24+
    SMD
    12000
    原裝正品 有掛就有貨
    詢價(jià)
    STMicroelectronics
    25+
    原封裝
    66230
    鄭重承諾只做原裝進(jìn)口現(xiàn)貨
    詢價(jià)
    ST/意法半導(dǎo)體
    23+
    N/A
    20000
    詢價(jià)
    ST
    2316+
    SOP-16
    5102
    上傳都是百分之百進(jìn)口原裝現(xiàn)貨
    詢價(jià)
    更多L63供應(yīng)商 更新時(shí)間2026-1-22 18:16:00

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