| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
High-voltage half bridge driver Description The L6384E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS 文件：207.39 Kbytes 頁(yè)數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High-voltage half bridge driver Description The L6384E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS 文件：207.39 Kbytes 頁(yè)數(shù)：17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6385 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive inde pendent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM 文件：147.76 Kbytes 頁(yè)數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6385 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive inde pendent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM 文件：147.76 Kbytes 頁(yè)數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th 文件：199.99 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th 文件：199.99 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th 文件：199.99 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th 文件：199.99 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th 文件：199.99 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th 文件：199.99 Kbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Package Type：
Mold
- Package Size：
Φ5mm
- Total Radiated Power Po(mW)：
12
- Maximum Forward Current(DC) IF(mA)：
50
- Maximum Pulse Forward Current IFP(mA)：
100
- Viewing Half Angle Θ1/2(degree)：
3
- Forward Current IF(mA)：
20
- Wavelength λp(nm)：
630
- Half Width ?λ(nm)：
15
- Output Power：
standard
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
25+ |
SOT5 |
3629 |
原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來(lái)電! |
詢價(jià) | |||
ST/意法 |
23+ |
SOIC8 |
1650 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ST |
24+ |
SOP |
4652 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢價(jià) | ||
STM |
23+ |
NA |
10658 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià)，原裝元器件供應(yīng)，支持開發(fā)樣品 |
詢價(jià) | ||
ST/意法 |
25+ |
NA |
30000 |
房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談 |
詢價(jià) | ||
ST |
1707+ |
SOP8 |
9100 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
ST |
19+ |
SOP28 |
16200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
25+ |
14-DIP |
8880 |
原裝認(rèn)準(zhǔn)芯澤盛世！ |
詢價(jià) | ||
ST |
23+ |
8-DIP |
65600 |
詢價(jià) |
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