100 V DMOS SWITCHES

DESCRIPTION Realized with the Multipower-BCD mixed bipolar/CMOS/DMOS process, the L6122/23monolithic three DMOS switch is designed for high current, high voltage switching applications. Each of the three switches is controlled by a logic input and all three are controlled by a common enable input

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STMICROELECTRONICS

意法半導(dǎo)體

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features ? Adoption of MBIT process. ? High current capacitance. ? Low collector-to-emitter saturation voltage. ? High speed switching. ? Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm). ? High allowable power dissipati

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SANYO

三洋

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features ? Adoption of MBIT process ? Large current capacity ? Low collector-to-emitter saturation voltage ? High speed switching ? Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) ? High allowable power dissipation Applications ? DC-DC converter, relay d

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ONSEMI

安森美半導(dǎo)體

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features ? Adoption of MBIT process ? Large current capacity ? Low collector-to-emitter saturation voltage ? High speed switching ? Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) ? High allowable power dissipation Applications ? DC-DC converter, relay d

文件：510.87 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體