Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features ? Adoption of MBIT process ? Large current capacity ? Low collector-to-emitter saturation voltage ? High speed switching ? Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) ? High allowable power dissipation Applications ? DC-DC converter, relay d

文件：510.87 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features ? Adoption of MBIT process. ? High current capacitance. ? Low collector-to-emitter saturation voltage. ? High speed switching. ? Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm). ? High allowable power dissipati

文件：236.36 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

MCH6123: Bipolar Transistor, -50V, -3A, Low VCE(sat), PNP Single MCPH6

MCH6123 is Bipolar Transistor, -50V, -3A, Low VCE(sat), PNP Single MCPH6 for DC-DC converter, relay drivers, lamp drivers, motor drivers Applications. Adoption of MBIT process\nLarge current capacity\nLow collector-to-emitter saturation voltage\nHigh speed switching\nUltrasmall-sized package permitting applied sets to be made small and slim (0.85mm)\nHigh allowable power dissipation;

ONSEMI

安森美半導體

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features ? Adoption of MBIT process ? Large current capacity ? Low collector-to-emitter saturation voltage ? High speed switching ? Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) ? High allowable power dissipation Applications ? DC-DC converter, relay d

文件：510.87 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

Package：6-SMD，扁平引線；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 3A 6MCPH

ONSEMI

安森美半導體