絲?。?strong>HGN；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 頁(yè)數(shù)：5 Pages

SUNMATE

森美特

絲?。?strong>HGN；Package：DSBGA(YFP)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features ? Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch ? Low static-power consumption (ICC = 0.9 μA Max) ? Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low input capacitance (CI = 1.5 pF Typ) ? Low noise – overshoot and undershoot

文件：2.78783 Mbytes 頁(yè)數(shù)：47 Pages

TI

德州儀器

絲印：HGN；Package：DSBGA(YFP)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features ? Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch ? Low static-power consumption (ICC = 0.9 μA Max) ? Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low input capacitance (CI = 1.5 pF Typ) ? Low noise – overshoot and undershoot

文件：2.78783 Mbytes 頁(yè)數(shù)：47 Pages

TI

德州儀器

絲?。?strong>HGN；Package：DSBGA(YZP)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features ? Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch ? Low static-power consumption (ICC = 0.9 μA Max) ? Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low input capacitance (CI = 1.5 pF Typ) ? Low noise – overshoot and undershoot

文件：2.78783 Mbytes 頁(yè)數(shù)：47 Pages

TI

德州儀器

絲?。?strong>HGN；Package：DSBGA(YZP)；SN74AUP1G32 Low-Power Single 2-Input Positive-OR Gate

1 Features ? Available in the ultra-small 0.64 mm2 package (DPW) with 0.5-mm pitch ? Low static-power consumption (ICC = 0.9 μA Max) ? Low dynamic-power consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low input capacitance (CI = 1.5 pF Typ) ? Low noise – overshoot and undershoot

文件：2.78783 Mbytes 頁(yè)數(shù)：47 Pages

TI

德州儀器

絲?。?strong>HGN；Package：DSBGA(YFP)；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES ? Available in the Texas Instruments NanoStar? Package ? Low Static-Power Consumption (ICC = 0.9 mA Maximum) ? Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low Input Capacitance (Ci = 1.5 pF Typical) ? Low Noise – Overshoot and Undershoot

文件：821.71 Kbytes 頁(yè)數(shù)：25 Pages

TI

德州儀器

絲印：HGN；Package：DSBGA；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES ? Available in the Texas Instruments NanoStar? Package ? Low Static-Power Consumption (ICC = 0.9 mA Maximum) ? Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low Input Capacitance (Ci = 1.5 pF Typical) ? Low Noise – Overshoot and Undershoot

文件：815.65 Kbytes 頁(yè)數(shù)：25 Pages

TI

德州儀器

絲?。?strong>HGN；Package：DSBGA；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES ? Available in the Texas Instruments NanoStar? Package ? Low Static-Power Consumption (ICC = 0.9 mA Maximum) ? Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low Input Capacitance (Ci = 1.5 pF Typical) ? Low Noise – Overshoot and Undershoot

文件：815.65 Kbytes 頁(yè)數(shù)：25 Pages

TI

德州儀器

絲印：HGN；Package：DSBGA(YFP)；LOW-POWER DUAL 2-INPUT POSITIVE-OR GATE

1FEATURES ? Available in the Texas Instruments NanoStar? Package ? Low Static-Power Consumption (ICC = 0.9 mA Maximum) ? Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low Input Capacitance (Ci = 1.5 pF Typical) ? Low Noise – Overshoot and Undershoot

文件：821.71 Kbytes 頁(yè)數(shù)：25 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/gn036n08s/marking.html">GN036N08S；Package：DFN5X6；80V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductria

文件：735.14 Kbytes 頁(yè)數(shù)：6 Pages

HUNTECK

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