| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>HGT;Package:DO-214AB;Surface Mount Transient Voltage Suppressor Power 4000Watts FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta 文件:668.54 Kbytes 頁數(shù):5 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲?。?strong>HGT;Package:DO-214AC;400W Surface Mount Transient Voltage Suppressors Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde 文件:3.2336 Mbytes 頁數(shù):7 Pages | UNSEMI 優(yōu)恩半導(dǎo)體 | UNSEMI | ||
絲?。?strong>HGT;Package:DO-214AB;SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability 文件:204.1 Kbytes 頁數(shù):5 Pages | SUNMATE 森美特 | SUNMATE | ||
絲?。?strong>HGT;Package:SMC;SMLJ Transient Voltage Suppressor Diode Series Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge 文件:182.78 Kbytes 頁數(shù):6 Pages | BOURNS 伯恩斯 | BOURNS | ||
絲印:GT009N04A;Package:TOLL;40V N-Ch Power MOSFET Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ M 文件:987.64 Kbytes 頁數(shù):6 Pages | HUNTECK 恒泰柯半導(dǎo)體 | HUNTECK | ||
絲?。?a target="_blank" title="Marking" href="/g20n60c3/marking.html">G20N60C3;Package:TO-263AB;45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately 文件:81.67 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | ||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only m 文件:144.1 Kbytes 頁數(shù):9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only 文件:152.32 Kbytes 頁數(shù):10 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only 文件:152.32 Kbytes 頁數(shù):10 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low 文件:217.6 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD |
詳細(xì)參數(shù)
- 型號(hào):
HGT
- 功能描述:
TVS 二極管 - 瞬態(tài)電壓抑制器 78volts 5uA 22.8 Amps Uni-Dir
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 極性:
Bidirectional
- 擊穿電壓:
58.9 V
- 鉗位電壓:
77.4 V
- 峰值浪涌電流:
38.8 A
- 封裝/箱體:
DO-214AB
- 最小工作溫度:
- 55 C
- 最大工作溫度:
+ 150 C
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MCC/美微科 |
2019+PB |
SMC |
89000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
MICROSEMI |
08+ |
DO-214AB |
76000 |
絕對(duì)全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn) |
詢價(jià) | ||
MCC |
19+ |
SMC |
200000 |
詢價(jià) | |||
MCC |
20+ |
SMC |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
BOURNS |
25+ |
DO-214 |
9746 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
Bourns |
22+ |
NA |
588900 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
MCC |
24+ |
SMC |
89000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
MCC/美微科 |
新年份 |
SMC |
89000 |
原裝正品大量現(xiàn)貨,要多可發(fā)貨,實(shí)單帶接受價(jià)來談! |
詢價(jià) | ||
BOURNS |
25+ |
N/A |
11528 |
樣件支持,可原廠排單訂貨! |
詢價(jià) | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢價(jià) |
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