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首頁 >K4E661612C>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
K4E661612C-T50	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages	SAMSUNG 三星	SAMSUNG
K4E661612C-T60	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages	SAMSUNG 三星	SAMSUNG
K4E661612C-TC	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages	SAMSUNG 三星	SAMSUNG
K4E661612C-TC45	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages	SAMSUNG 三星	SAMSUNG
K4E661612C-TC50	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages	SAMSUNG 三星	SAMSUNG
K4E661612C-TC60	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages	SAMSUNG 三星	SAMSUNG
K4E661612C-TL45	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages	SAMSUNG 三星	SAMSUNG
K4E661612C-TL50	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages	SAMSUNG 三星	SAMSUNG
K4E661612C-TL60	文件：884.02 Kbytes Page：36 Pages	4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages	SAMSUNG 三星	SAMSUNG

詳細(xì)參數(shù)

型號：
K4E661612C
制造商：
SAMSUNG
制造商全稱：
Samsung semiconductor
功能描述：
4M x 16bit CMOS Dynamic RAM with Extended Data Out

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市益百分電子有限公司	K4E661612C-TP50	SAMSUNG	TSOP50	0070+	1156	全新原裝進口自己庫存優(yōu)勢	詢價
芯有半導(dǎo)體（深圳）有限公司	K4E661612C-TL50	SAM	06+	TSOP	1000	自己公司全新庫存絕對有貨	詢價
深圳市一線半導(dǎo)體有限公司	K4E661612C-GL60	SAMSUNG	24+	BGA	427		詢價
深圳市鵬和科技有限公司	K4E661612C-TP50	SAMSUNG	24+	TSOP50	5000	只做原裝公司現(xiàn)貨	詢價
上海專毅電子科技有限公司	K4E661612C-TP50	SAMSUNG	17+	TSOP50	9988	只做原裝進口,自己庫存	詢價
深圳市佳鑫美電子科技有限公司	K4E661612C-GL60	SAMSUNG	25+	BGA	2140	全新原裝!現(xiàn)貨特價供應(yīng)	詢價
艾睿（深圳）半導(dǎo)體有限公司	K4E661612C-TP50	SAMSUNG/三星	2447	TSOP	100500	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價
深圳市威爾健半導(dǎo)體有限公司	K4E661612C-GL60	SAMSUNG/三星	23+	BGA	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
京海半導(dǎo)體(深圳)有限公司	K4E661612C-TP50	SAMSUNG/三星	25+	TSOP50	10000	原裝現(xiàn)貨假一罰十	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	K4E661612C-GL60	SAMSUNG/三星	23+	BGA	3000	一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價

更多K4E661612C供應(yīng)商更新時間2026-1-19 15:36:00

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