首頁 >K4E661612C>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
K4E661612C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG | |
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f 文件：884.02 Kbytes 頁數(shù)：36 Pages | SAMSUNG 三星 | SAMSUNG |
詳細參數(shù)
- 型號：
K4E661612C
- 制造商：
SAMSUNG
- 制造商全稱：
Samsung semiconductor
- 功能描述：
4M x 16bit CMOS Dynamic RAM with Extended Data Out
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
TSOP50 |
0070+ |
1156 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
SAM |
06+ |
TSOP |
1000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
SAMSUNG |
24+ |
BGA |
427 |
詢價 | |||
SAMSUNG |
24+ |
TSOP50 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
SAMSUNG |
17+ |
TSOP50 |
9988 |
只做原裝進口,自己庫存 |
詢價 | ||
SAMSUNG |
25+ |
BGA |
2140 |
全新原裝!現(xiàn)貨特價供應(yīng) |
詢價 | ||
SAMSUNG/三星 |
2447 |
TSOP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
SAMSUNG/三星 |
25+ |
TSOP50 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
SAMSUNG/三星 |
23+ |
BGA |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 |
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