絲?。?strong>K4B；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 頁數(shù)：9 Pages

ROHM

羅姆

絲?。?strong>K4B；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ? Automotive ? Motor Drivers ? Switching Voltage Regulators Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.

文件：566.9 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?strong>K4B；Package：SOT-23-5；Programmable Precise Output Voltage from 2.5V to 36V or 18V

文件：1.3104 Mbytes 頁數(shù)：19 Pages

LEIDITECH

雷卯電子

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

文件：1.25538 Mbytes 頁數(shù)：63 Pages

SAMSUNG

三星

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

文件：1.25538 Mbytes 頁數(shù)：63 Pages

SAMSUNG

三星

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

文件：1.25538 Mbytes 頁數(shù)：63 Pages

SAMSUNG

三星

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

文件：1.25538 Mbytes 頁數(shù)：63 Pages

SAMSUNG

三星

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

文件：1.2053 Mbytes 頁數(shù)：60 Pages

SAMSUNG

三星

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

文件：1.2053 Mbytes 頁數(shù)：60 Pages

SAMSUNG

三星

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

文件：1.2053 Mbytes 頁數(shù)：60 Pages

SAMSUNG

三星