絲?。?strong>K4A；Package：SOT363；40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363

Features ? BVCEO > 40V ? IC = 200mA High Collector Current ? Pair of NPN Transistors that are Intrinsically Matched (Note 1) ? 2 Matching on Current Gain (hFE) ? 2mV Matching on Base-Emitter Voltage (VBE) ? Fully Internally Isolated in a Small Surface Mount Package ? Totally Lead-Free & Ful

文件：459.84 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>K4A；Package：DFN8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>K4A；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ? Automotive ? Motor Drivers ? Switching Voltage Regulators Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.

文件：565.42 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?strong>K4A；Package：SOT-23-5；Programmable Precise Output Voltage from 2.5V to 36V or 18V

文件：1.3104 Mbytes 頁數(shù)：19 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/k4a60db/marking.html">K4A60DB；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) ? High forward transfer admittance: |Yfs| = 2.2 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 600V) ? Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

文件：261.5 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k4a80e/marking.html">K4A80E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.4 mA)

文件：385.61 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 頁數(shù)：28 Pages

SAMSUNG

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 頁數(shù)：28 Pages

SAMSUNG

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 頁數(shù)：28 Pages

SAMSUNG

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 頁數(shù)：28 Pages

SAMSUNG

三星