KILOVAC High Voltage Relays

文件：392.71 Kbytes 頁數(shù)：2 Pages

TEC

泰科電子

N-Channel Silicon MOSFET General-Purpose Switching Device

Features ? Low ON-resistance, low input capacitance, ultrahigh-speed switching. ? Adoption of high reliability HVP process. ? Attachment workability is good by Mica-less package. ? Avalanche resistance guarantee.

文件：56.16 Kbytes 頁數(shù)：5 Pages

SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features ?Low ON-resistance. ?High-speed switching. ?10V drive. ? Avalanche resistance guarantee.

文件：274.1 Kbytes 頁數(shù)：5 Pages

SANYO

三洋

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) ? High forward transfer admittance: |Yfs| = 8.5 S (typ.) ? Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：181.8 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Switching Regulator Applications

Switching Regulator Applications ? Low drain?source ON resistance : RDS(ON) = 0. 33 ?(typ.) ? High forward transfer admittance : |Yfs| = 8.5 S (typ.) ? Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) ? Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：268.5 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications Low drain?source ON resistance : RDS (ON)= 0. 21Ω(typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 500 V) Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

文件：286.94 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 0.9 ? (typ.) ? High forward transfer admittance: |Yfs| = 5.0 S (typ.) ? Low leakage current: IDSS = 100 μA (VDS = 600 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：199.98 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Switching Regulator Applications

Features ? Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) ? High forward transfer admittance: |Yfs| = 8.5S (typ.) ? Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：246.18 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON)= 1.6 Ω(typ.) ? High forward transfer admittance: ?Yfs?= 5.0 S (typ.) ? Low leakage current: IDSS= 100 μA (max) (VDS= 720 V) ? Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

文件：151.49 Kbytes 頁數(shù)：3 Pages

TOSHIBA

東芝

GLASS PASSIVATED SINGLE

FEATURES * Plastic Package has Underwriters Laboratory Flammability Classification 94V - 0 * Ideal for printed circuit boards * Glass passivated chip junction * High Surge Current Capability * High temperature Soldering Guaranteed 260°C/10 Seconds,O.375(9. 5mm) lead length

文件：1.09312 Mbytes 頁數(shù)：2 Pages

KISEMICONDUCTOR