絲?。?strong>K3R；Package：SOT-323；PNP Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplification and Switching ● Complementary to MMSTA42

文件：1.23213 Mbytes 頁數(shù)：2 Pages

KEXIN

科信電子

絲?。?strong>K3R；Package：SOT-323；PNP Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplification and Switching ● Complementary to MMSTA42

文件：1.23213 Mbytes 頁數(shù)：2 Pages

KEXIN

科信電子

絲?。?strong>K3R；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES Small Surface Mount Package Complementary to MMSTA42 Ideal for Medium Power Amplification and Switching

文件：1.86789 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲印：K3R；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Epitaxial planar die construction. ● Complementary to MMSTA42. ● Also available in lead free version. APPLICATIONS ● General purpose application and switching application.

文件：131.78 Kbytes 頁數(shù)：2 Pages

BILIN

銀河微電

絲?。?strong>K3R；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

文件：192.41 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

絲?。?a target="_blank" title="Marking" href="/k3r1a04pl/marking.html">K3R1A04PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS

文件：497.25 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲印：K3R2A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS

文件：626.49 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲印：K3R9E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Small output charge: Qoss = 99 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS =

文件：629.46 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k3r2a08qm/marking.html">K3R2A08QM；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

文件：490.55 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k3r3e08qm/marking.html">K3R3E08QM；Package：TO-220；MOSFETs Silicon N-channel MOS

文件：499.13 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝