絲?。?strong>K28；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53183 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導體

絲印：K28；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BARRIERRECTIFIER

Features ? Low power loss, high efficiency ? High forward surge current capability + High Current Capability + For surface mounted applications + Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C Applications. These Schottky barrier diodes are designed for high speed switching. ap

文件：942.77 Kbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>K28；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.22 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風微

絲?。?strong>K28；Surface Mount Schottky Rectifiers

文件：1.27753 Mbytes 頁數(shù)：3 Pages

JUXING

廣東鉅興電子

絲?。?strong>K28；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

文件：2.35179 Mbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

絲?。?strong>K28；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

文件：896.34 Kbytes 頁數(shù)：4 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

絲?。?a target="_blank" title="Marking" href="/k28a65w/marking.html">K28A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA)

文件：287.93 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k28e65w/marking.html">K28E65W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA)

文件：302.02 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k28n65w/marking.html">K28N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA)

文件：241.42 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲印：K28N65W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 115 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：244.27 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝