絲?。?strong>K2P；Package：DFN1006-2；1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features o Low operating voltage: 3.3V/ o Ultra low capacitance: 0.4pF (Typ) Ultra low leakage: nA level o Low clamping voltage o —IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharge: +30kV —IEC61000-4-4 (EFT) 40A (5/50ns) —IEC61000-4-5 (Lightning) 8A (8/20ps) o 2-pi

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絲?。?strong>K2P；Package：DFN83x3WF；High bandwidth (52 MHz), rail-to-rail output, 36 V op amp

Features ? Low offset voltage: 3 mV max @ 25 °C ? Low current consumption: 3.3 mA max / op @ 36 V ? Wide supply voltage: 4.5 to 36 V ? Gain bandwidth product: 52 MHz typ. @ 36 V ? Unity gain stable ? Rail-to-rail output ? Output current: 40 mA typ. @ 36 V ? Input common-mode voltage includ

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STMICROELECTRONICS

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絲?。?strong>K2P；Package：DFN83x3WF；High bandwidth (52 MHz), rail-to-rail output, 36 V op amp

Features ? Low offset voltage: 3 mV max @ 25 °C ? Low current consumption: 3.3 mA max / op @ 36 V ? Wide supply voltage: 4.5 to 36 V ? Gain bandwidth product: 52 MHz typ. @ 36 V ? Unity gain stable ? Rail-to-rail output ? Output current: 40 mA typ. @ 36 V ? Input common-mode voltage includ

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STMICROELECTRONICS

意法半導(dǎo)體