Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)

These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes connected in a reverse-paralled configuration for AC-inputand a Silicon NPN Phototransistor per a channel. The K201 has one channel in a 4-pin mini-flat SMD package. The K202 has two channels in a 8-pin mini-fla

文件：140.13 Kbytes 頁數(shù)：3 Pages

KODENSHI

可天士

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

文件：202.63 Kbytes 頁數(shù)：2 Pages

FUJI

富士通

Field Effect Transistor Silicon N Channel MOS Type

Field Effect Transistor Silicon N Channel MOS Type (π-MOS IV) High Speed, High Current Switching Applications Features ● Low Drain-Source ON Resistance - RDS(ON) = 0.24Ω (Typ.) ● High Forward Transfer Amittnace -|Yfs| = 15S (Typ.) ● Low Leakage Current - IDSS = -100μA (Max.)(VDS

文件：74.3 Kbytes 頁數(shù)：2 Pages

TOSHIBA

東芝

Field Effect Transistor Silicon N Channel MOS Type

Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current Switching Applications

文件：213.12 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

N-channel MOS-FET

150V 0,08? 20A 50W > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

文件：191.41 Kbytes 頁數(shù)：2 Pages

FUJI

富士通

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) ? High forward transfer admittance: ?Yfs? = 12 S (typ.) ? Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) ? Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：184.91 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

文件：248.86 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

First Aid Kit

Features: Comprehensively stocked and compliant with Health & Safety regulations Available for 1-10, 11-20, 21-50 and 50+ Persons Shatterproof ABS case Clear perspex contents dividers Rubber dust & moisture seal Sturdy wall mounting bracket, clips directly to case

文件：291.85 Kbytes 頁數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

Features ? Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 105°C ? Performance – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz ? Memories and

文件：1.77365 Mbytes 頁數(shù)：65 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

K20 Sub-Family Data Sheet

Features ? Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 105°C ? Performance – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz ? Memories and

文件：894.47 Kbytes 頁數(shù)：61 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體