Field Effect Transistor Silicon N Channel MOS Type

Field Effect Transistor Silicon N Channel MOS Type (π-MOS IV) High Speed, High Current Switching Applications Features ● Low Drain-Source ON Resistance - RDS(ON) = 0.24Ω (Typ.) ● High Forward Transfer Amittnace -|Yfs| = 15S (Typ.) ● Low Leakage Current - IDSS = -100μA (Max.)(VDS

文件：74.3 Kbytes 頁數(shù)：2 Pages

TOSHIBA

東芝

BIPOLAR LINEAR INTEGRATED CIRCUIT (AM/FM IF MPX FOR DIGITAL TUNING SYSTEM)

AM/FM IF + MPX (for Digital Tuning System)

文件：170.77 Kbytes 頁數(shù)：7 Pages

KEC

KEC(Korea Electronics)

BIPOLAR LINEAR INTEGRATED CIRCUIT (AM/FM IF MPX FOR DIGITAL TUNING SYSTEM)

AM/FM IF + MPX (for Digital Tuning System)

文件：170.77 Kbytes 頁數(shù)：7 Pages

KEC

KEC(Korea Electronics)

3fach-Silizium-Fotodiodenzeile 3-Chip Silicon Photodiode Array

Features ● Especially suitable for applications from 400 nm to 1100 nm ● Short switching time (typ. 14 ns) ● DIL plastic package Applications ● Follow-up controls ● Edge drives ● Positioning ● Industrial electronics ● For control and drive circuits

文件：181.4 Kbytes 頁數(shù)：4 Pages

SIEMENS

西門子