絲?。?a target="_blank" title="Marking" href="/k20e60w/marking.html">K20E60W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

文件：253.81 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k20e60w5/marking.html">K20E60W5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：252.36 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k20j60w5/marking.html">K20J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：243.87 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k20n60w5/marking.html">K20N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：244.07 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲印：K2094；Package：SOT-428；4V Drive Nch MOS FET

文件：95.65 Kbytes 頁數(shù)：5 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/k20eeh5/marking.html">K20EEH5；Package：PG-TO263-3；TRENCHSTOPTM 5 high speed switching IGBT copacked with full rated current RAPID 1 anti parallel diode

文件：1.56908 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

絲印：K20T60；Package：PG-TO220-3；IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：505.48 Kbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/k20h603/marking.html">K20H603；Package：PG-TO247-3；IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

文件：2.19606 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/k20eet7/marking.html">K20EET7；Package：PG-TO247-3；Low Loss Duopack: IGBT with Trench and Fieldstop technology

文件：1.9055 Mbytes 頁數(shù)：17 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/k20n60/marking.html">K20N60；Package：PG-TO-247-3；Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：321.44 Kbytes 頁數(shù)：13 Pages

INFINEON

英飛凌