絲?。?a target="_blank" title="Marking" href="/k20a/marking.html">K20A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 頁數(shù)：7 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/k20c/marking.html">K20C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 頁數(shù)：7 Pages

SY

順燁電子

絲印：K2094；Package：SOT-428；Small switching (60V, 2A)

Structure Silicon N-channel MOS FET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

文件：127.41 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/k200gcp2/marking.html">K200GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features ? VCE = 750 V ? IC = 200 A ? Low saturation voltage VCEsat = 1.4 V ? Low switching losses ? Short circuit ruggedness 3 μs ? IGBT co-packed with full current, soft and fast recovery diode ? Optimized for hard switching topologies up to 10 KHz ? Package backside suitable for reflow

文件：1.65082 Mbytes 頁數(shù)：17 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/k200a65z5/marking.html">K200A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61

文件：493.67 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k200e65z5/marking.html">K200E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61 mA)

文件：503.23 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲印：K200U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61

文件：509.58 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

絲印：K20A60U；Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) ? High forward transfer admittance: ?Yfs? = 12 S (typ.) ? Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) ? Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：184.91 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

絲印：K20A60W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

文件：248.86 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k20a60w5/marking.html">K20A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：239.33 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝