絲?。?strong>K17；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

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順燁電子

絲?。?strong>K17；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.86 Kbytes 頁(yè)數(shù)：3 Pages

SY

順燁電子

絲印：K17A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA)

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絲印：K17A65W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：246.96 Kbytes 頁(yè)數(shù)：10 Pages

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絲?。?a target="_blank" title="Marking" href="/k17a80w/marking.html">K17A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85mA)

文件：414.56 Kbytes 頁(yè)數(shù)：10 Pages

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絲?。?a target="_blank" title="Marking" href="/k17e65w/marking.html">K17E65W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA)

文件：254.8 Kbytes 頁(yè)數(shù)：10 Pages

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絲?。?a target="_blank" title="Marking" href="/k17e80w/marking.html">K17E80W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85 mA)

文件：422.92 Kbytes 頁(yè)數(shù)：10 Pages

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絲?。?a target="_blank" title="Marking" href="/k17n65w/marking.html">K17N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA)

文件：251.58 Kbytes 頁(yè)數(shù)：10 Pages

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LOW VOLTAGE OPERATIONAL AMPLIFIER

DESCRIPTION The TK17010 is a single-supply operational amplifier capable of operating from a very low and very wide supply voltage range (VCC = 1.0 to 7 V). With its rail-to-rail structures, the input signal circuit can accept a very wide input voltage range (VIN = 0 to 1.4 VP-P). The TK17010 can

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TOKO

FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

Low Noise Audio Amplifier Applications ? Recommended for first stages of EQ and M.C. head amplifiers. ? High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) ? High breakdown voltage: VGDS = ?40 V ? Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) ? High

文件：218.88 Kbytes 頁(yè)數(shù)：4 Pages

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