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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MBRS170

          絲?。?strong>K17;Package:SOD-123FL;SCHOTTK Y BARRIER DIODE

          Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

          文件:477.13 Kbytes 頁(yè)數(shù):3 Pages

          SY

          順燁電子

          SS1070FL

          絲?。?strong>K17;Package:SOD-123FL;SCHOTTK Y BARRIER DIODE

          Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

          文件:542.86 Kbytes 頁(yè)數(shù):3 Pages

          SY

          順燁電子

          TK17A65W

          絲印:K17A65W;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA)

          文件:248.13 Kbytes 頁(yè)數(shù):10 Pages

          TOSHIBA

          東芝

          TK17A65W5

          絲?。?a target="_blank" title="Marking" href="/k17a65w5/marking.html">K17A65W5;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

          文件:246.96 Kbytes 頁(yè)數(shù):10 Pages

          TOSHIBA

          東芝

          TK17A80W

          絲?。?a target="_blank" title="Marking" href="/k17a80w/marking.html">K17A80W;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85mA)

          文件:414.56 Kbytes 頁(yè)數(shù):10 Pages

          TOSHIBA

          東芝

          TK17E65W

          絲印:K17E65W;Package:TO-220;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA)

          文件:254.8 Kbytes 頁(yè)數(shù):10 Pages

          TOSHIBA

          東芝

          TK17E80W

          絲?。?a target="_blank" title="Marking" href="/k17e80w/marking.html">K17E80W;Package:TO-220;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85 mA)

          文件:422.92 Kbytes 頁(yè)數(shù):10 Pages

          TOSHIBA

          東芝

          TK17N65W

          絲?。?a target="_blank" title="Marking" href="/k17n65w/marking.html">K17N65W;Package:TO-247;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.9 mA)

          文件:251.58 Kbytes 頁(yè)數(shù):10 Pages

          TOSHIBA

          東芝

          K170

          LOW VOLTAGE OPERATIONAL AMPLIFIER

          DESCRIPTION The TK17010 is a single-supply operational amplifier capable of operating from a very low and very wide supply voltage range (VCC = 1.0 to 7 V). With its rail-to-rail structures, the input signal circuit can accept a very wide input voltage range (VIN = 0 to 1.4 VP-P). The TK17010 can

          文件:47.87 Kbytes 頁(yè)數(shù):8 Pages

          TOKO

          K170

          FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

          Low Noise Audio Amplifier Applications ? Recommended for first stages of EQ and M.C. head amplifiers. ? High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) ? High breakdown voltage: VGDS = ?40 V ? Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) ? High

          文件:218.88 Kbytes 頁(yè)數(shù):4 Pages

          TOSHIBA

          東芝

          詳細(xì)參數(shù)

          • 型號(hào):

            K17

          • 制造商:

            GXELECTRONICS

          • 制造商全稱:

            Gaomi Xinghe Electronics Co., Ltd.

          • 功能描述:

            Low power loss,high efficiency

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          更多K17供應(yīng)商 更新時(shí)間2026-1-20 16:11:00
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