14 Stage Ripple-Carry Binary Counter/Divider

14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS The IW4020B is ripple-carry binary counter. All counter stages are master slave flip-flops. The state of a counter advances one count on the negative transition of each input pulse; a high level on the RESET line

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14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS

14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS The IW4020B is ripple-carry binary counter. All counter stages are master slave flip-flops. The state of a counter advances one count on the negative transition of each input pulse; a high level on the RESET line

文件：245.22 Kbytes 頁數(shù)：6 Pages

IKSEMICON

14 stage ripply-carry binary counter/divider, high-voltage silicon-gate CMOS

INTEGRAL

14 Stage Ripple-Carry Binary Counter/Divider

14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS The IW4020B is ripple-carry binary counter. All counter stages are master slave flip-flops. The state of a counter advances one count on the negative transition of each input pulse; a high level on the RESET line

文件：309.81 Kbytes 頁數(shù)：6 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS

14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS The IW4020B is ripple-carry binary counter. All counter stages are master slave flip-flops. The state of a counter advances one count on the negative transition of each input pulse; a high level on the RESET line

文件：245.22 Kbytes 頁數(shù)：6 Pages

IKSEMICON

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

Features ● -16 A, -20 V. RDS(on) = 0.08 ù @ VGS = -4.5 V RDS(on) = 0.11 ù @ VGS = -2.5 V. ● Critical DC electrical parameters specified at elevated temperature. ● High density cell design for extremely low RDS(on).

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