N-Channel MOSFET Transistor

? DESCRITION ? New revolutionary high voltage technology ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤280m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and relia

文件：339.62 Kbytes 頁數(shù)：2 Pages

ISC

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isc N-Channel MOSFET Transistor

? DESCRITION ? Improved Transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤280m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.2 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Cool MOS??Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：363.45 Kbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes 頁數(shù)：14 Pages

INFINEON

英飛凌