N-Channel MOSFET Transistor

? DESCRIPTION ? Ultra low gate charge ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.22? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

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isc N-Channel MOSFET Transistor

? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤220m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.88 Kbytes 頁數(shù)：2 Pages

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High Voltage IGBT with optional Diode

VCES = 600 V IC25 = 32 A VCE(sat) typ = 2.2 V Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultr

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IXYS

艾賽斯

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：82.08 Kbytes 頁數(shù)：4 Pages

IXYS

艾賽斯