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    首頁
                >ISPP11N60CFD>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    ISPP11N60CFD
    N-Channel MOSFET Transistor
    
? DESCRIPTION
? Ultra low gate charge
? High peak current capability
? FEATURES
? Static drain-source on-resistance: RDS(on) ≤0.44?
? Enhancement mode
? Fast Switching Speed
? 100 avalanche tested
? Minimum Lot-to-Lot variations for robust device performance and reliable operation
    文件：338.75 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    ISPW11N60CFD
    isc N-Channel MOSFET Transistor
    
? DESCRITION
? High peak current capability
? FEATURES
? Static drain-source on-resistance:
   RDS(on)≤440m?
? Enhancement mode:
? 100 avalanche tested
? Minimum Lot-to-Lot variations for robust device
   performance and reliable operation
    文件：335.24 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    IXFH11N60
    HIPERFET Power MOSFTETs
    
HiPerFETs
The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.
    文件：295.27 Kbytes 頁數(shù)：8 Pages
    IXYS
    艾賽斯
    

    IXFM11N60
    HIPERFET Power MOSFTETs
    
HiPerFETs
The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.
    文件：295.27 Kbytes 頁數(shù)：8 Pages
    IXYS
    艾賽斯
    

    
            
    
		
    
            
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