絲印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

? DESCRITION ? High peak current capability ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.6? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

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N-Channel MOSFET Transistor

? DESCRIPTION ? Ultra low gate charge ? High peak current capability ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.6? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device perform

文件：339.45 Kbytes 頁數(shù)：2 Pages

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Cool MOS??Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) ? Pb-free lead plating; RoHS complian

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New revolutionary high voltage technology Ultra low gate charge

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