Cool MOS??Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) ? Pb-free lead plating; RoHS complian

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INFINEON

英飛凌

New revolutionary high voltage technology Ultra low gate charge

文件：1.30229 Mbytes 頁(yè)數(shù)：15 Pages

INFINEON

英飛凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

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INFINEON

英飛凌

Isc N-Channel MOSFET Transistor

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ISC

無(wú)錫固電

N-Channel 650V (D-S)Power MOSFET

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VBSEMI

微碧半導(dǎo)體

500V-900V CoolMOS? N-Channel Power MOSFET

Replacement for 600V CoolMOS? C3 is CoolMOS? P7\n 600V CoolMOS? C3 is Infineon's third series of CoolMOS? with market entry in 2001. C3 is the \"working horse\" of the portfolio. ? Low specific on-state resistance (RDS(on)*A)\n? Very low energy storage in output capacitance (Eoss) @400V\n? Low gate charge (Qg)\n? Fieldproven CoolMOS? quality\n? CoolMOS? technology has been manufactured by Infineon since 1998\n\n優(yōu)勢(shì):\n? High efficiency and power density\n? Outstanding cost/per;

Infineon

英飛凌