isc N-Channel MOSFET Transistor

文件：315.47 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

100V N-Channel MOSFET

文件：1.85124 Mbytes 頁數(shù)：7 Pages

KERSEMI

TMOS POWER FET 33 AMPERES 100 VOLTS

TMOS E-FET? High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offer

文件：266.15 Kbytes 頁數(shù)：10 Pages

MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：333.08 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電