TMOS POWER FET 33 AMPERES 100 VOLTS

TMOS E-FET? High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offer

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

無錫固電

N??hannel Power MOSFET

文件：268.35 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導體

N??hannel Power MOSFET

文件：268.35 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導體

N?Channel Power MOSFET

ONSEMI

安森美半導體