200V, 7.5A Enhancement Mode GaN Power Transistor

Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Lo

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200V, 7.5A Enhancement Mode GaN Power Transistor

Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si)

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200V, 7.5A Enhancement Mode GaN Power Transistors

The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) low Dose Rate (LDR). A ?\n? Very low rDS(ON) 45mΩ (typical) \n? Ultra low total gate charge 2.5nC (typical) \n? SEE tolerance (VDS = 160V, VGS = 0V) \n? Characterized at LET 86 MeV?cm2/mg \n? Radiation hardness assurance testing (lot-by-lot) \n? High dose rate (50-300rad(Si)/s): 100krad(Si) \n? Low dose rate (0.01rad(Si)/;

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