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    首頁(yè) >ISL73024SEH>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    ISL73024SEH

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Lo

    文件:512.87 Kbytes 頁(yè)數(shù):13 Pages

    RENESAS

    瑞薩

    ISL73024SEH

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si)

    文件:477.53 Kbytes 頁(yè)數(shù):14 Pages

    RENESAS

    瑞薩

    ISL73024SEHL/PROTO

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Lo

    文件:512.87 Kbytes 頁(yè)數(shù):13 Pages

    RENESAS

    瑞薩

    ISL73024SEHLSLASHPROTO

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si)

    文件:477.53 Kbytes 頁(yè)數(shù):14 Pages

    RENESAS

    瑞薩

    ISL73024SEHLSLASHPROTO

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Lo

    文件:512.87 Kbytes 頁(yè)數(shù):13 Pages

    RENESAS

    瑞薩

    ISL73024SEHML

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si)

    文件:477.53 Kbytes 頁(yè)數(shù):14 Pages

    RENESAS

    瑞薩

    ISL73024SEHML

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Lo

    文件:512.87 Kbytes 頁(yè)數(shù):13 Pages

    RENESAS

    瑞薩

    ISL73024SEHMX

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Lo

    文件:512.87 Kbytes 頁(yè)數(shù):13 Pages

    RENESAS

    瑞薩

    ISL73024SEHMX

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg(Si) ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si)

    文件:477.53 Kbytes 頁(yè)數(shù):14 Pages

    RENESAS

    瑞薩

    ISL73024SEHX/SAMPLE

    200V, 7.5A Enhancement Mode GaN Power Transistor

    Features ? Very low rDS(ON) 45mΩ (typical) ? Ultra low total gate charge 2.5nC (typical) ? SEE hardness (see SEE report for details) ? SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV?cm2/mg ? ISL70024SEH radiation acceptance (see TID report) ? High dose rate (50-300rad(Si)/s): 100krad(Si) ? Lo

    文件:512.87 Kbytes 頁(yè)數(shù):13 Pages

    RENESAS

    瑞薩

    技術(shù)參數(shù)

    • IDS (A):

      7.5

    • VGS(TH) (Max) (V):

      2.5

    • VGS (Max) (V):

      6

    • RDSON (Typ) (m?):

      45

    • QG (nC) typ (nC):

      14

    • Thermal Resistance θJC (°C/W):

      18.7

    • Low Dose Rate (LDR) (krad (Si)):

      75

    • Lead Count (#):

      4

    • Pkg. Type:

      CLCC

    • Temp. Range:

      -55 to 125°C

    • Qualification Level:

      Modified Class V

    • Models Available:

      SPICE

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    RENESAS
    22+
    SOP
    6000
    專(zhuān)業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
    詢(xún)價(jià)
    RENESAS
    25+
    SOP
    15000
    瑞薩全系列在售,大代理渠道直供
    詢(xún)價(jià)
    INTERSIL
    2447
    20
    100500
    一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
    詢(xún)價(jià)
    INTERSIL
    26+
    BGA
    21530
    專(zhuān)業(yè)軍工優(yōu)勢(shì)原裝現(xiàn)貨價(jià)格優(yōu)惠 假一賠百
    詢(xún)價(jià)
    Renesas Electronics
    2022+
    原廠原包裝
    8600
    全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
    詢(xún)價(jià)
    INTERSIL
    23+
    20
    10000
    原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
    詢(xún)價(jià)
    INTERSIL
    24+
    NA
    10021
    只做原裝正品現(xiàn)貨 歡迎來(lái)電查詢(xún)15919825718
    詢(xún)價(jià)
    INTERSIL
    25+
    160
    原廠原裝,價(jià)格優(yōu)勢(shì)
    詢(xún)價(jià)
    RENESAS
    24+
    con
    35960
    查現(xiàn)貨到京北通宇商城
    詢(xún)價(jià)
    H
    24+
    CSOP
    66800
    原廠授權(quán)一級(jí)代理,專(zhuān)注汽車(chē)、醫(yī)療、工業(yè)、新能源!
    詢(xún)價(jià)
    更多ISL73024SEH供應(yīng)商 更新時(shí)間2026-1-22 17:06:00

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