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          首頁(yè) >IS43D>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IS43DR16640B-25DBI

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR16640B-25DBL

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR16640B-25DBLI

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR16640B-25EBL

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR16640B-25EBLI

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR16640B-3DBI

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR16640B-3DBL

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR16640B-3DBLI

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR81280B-25DBLI

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR81280B-25EBL

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          ISSI
          1725+
          ?
          8450
          只做原裝進(jìn)口,假一罰十
          詢價(jià)
          ISSI
          25+
          電聯(lián)咨詢
          7800
          公司現(xiàn)貨,提供拆樣技術(shù)支持
          詢價(jià)
          ISSI Integrated Silicon Soluti
          22+
          84WBGA (8x12.5)
          9000
          原廠渠道,現(xiàn)貨配單
          詢價(jià)
          ISSI
          23+
          BGA84
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
          詢價(jià)
          ISSI, Integrated Silicon Solut
          21+
          780-BBGA,FCBGA
          418
          進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
          詢價(jià)
          ISSI
          25+
          BGA
          12500
          全新原裝現(xiàn)貨,假一賠十
          詢價(jià)
          ISSI, Integrated Silicon Solut
          24+
          84-WBGA(8x12.5)
          56200
          一級(jí)代理/放心采購(gòu)
          詢價(jià)
          ISSI
          1931+
          N/A
          493
          加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
          詢價(jià)
          ISSI
          25+
          BGA-84
          2854
          就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
          詢價(jià)
          ISSI
          21+
          BGA
          1042
          只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢!
          詢價(jià)
          更多IS43D供應(yīng)商 更新時(shí)間2026-1-19 15:10:00
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