512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

文件：113.29 Kbytes 頁(yè)數(shù)：18 Pages

ISSI

矽成半導(dǎo)體

512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件：201.12 Kbytes 頁(yè)數(shù)：18 Pages

ICSI

512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件：201.12 Kbytes 頁(yè)數(shù)：18 Pages

ICSI

512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件：201.12 Kbytes 頁(yè)數(shù)：18 Pages

ICSI

512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件：201.12 Kbytes 頁(yè)數(shù)：18 Pages

ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION\nThe ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns ? TTL compatible inputs and outputs; tristate I/O\n? Refresh Interval:\n— Auto refresh Mode: 1,024 cycles /16 ms\n— RAS-Only, CAS-before-RAS (CBR), and Hidden\n— Self refresh Mode - 1,024 cycles / 128ms\n? JEDEC standard pinout\n? Single power supply:\n— 5V ± 10% (IS41C16100)\n— 3.3V ± 10% (;

ISSI

矽成半導(dǎo)體

EDO & Fast Page Mode DRAM

·Extended Data-Out (EDO) or Fast Page Mode (FPM) option\n·TTL compatible inputs and outputs:5V ± 10% and 3.3V ± 10%\n·Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden\n·Byte Write and Byte Read operation via two CAS\n·Industrial temperature range: -40°C to +85°C\n·Long-Term Support\n

ISSI

矽成半導(dǎo)體

5V 1M x 16(16-MBIT) dynamic RAM with edo page mode

ISSI

矽成半導(dǎo)體

Package：42-BSOJ（0.400"，10.16mm 寬）；包裝：卷帶（TR） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 16MBIT PARALLEL 42SOJ

ISSI, Integrated Silicon Solution Inc

Package：50-TSOP（0.400"，10.16mm 寬），44 引線；包裝：卷帶（TR） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 16MBIT PAR 50TSOP II

ISSI, Integrated Silicon Solution Inc