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首頁 >IS41>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IS41C16100S-60K	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 頁數(shù)：20 Pages	ICSI	ICSI
IS41C16100S-60KI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 頁數(shù)：20 Pages	ICSI	ICSI
IS41C16100S-60T	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 頁數(shù)：20 Pages	ICSI	ICSI
IS41C16100S-60TI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 頁數(shù)：20 Pages	ICSI	ICSI
IS41C16105	文件：140.83 Kbytes Page：18 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, 文件：140.83 Kbytes 頁數(shù)：18 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105	文件：523.179 Kbytes Page：18 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, 文件：523.179 Kbytes 頁數(shù)：18 Pages	ICSI	ICSI
IS41C16105-50K	文件：523.179 Kbytes Page：18 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, 文件：523.179 Kbytes 頁數(shù)：18 Pages	ICSI	ICSI
IS41C16105-50K	文件：140.83 Kbytes Page：18 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, 文件：140.83 Kbytes 頁數(shù)：18 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-50KE	文件：140.83 Kbytes Page：18 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, 文件：140.83 Kbytes 頁數(shù)：18 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS41C16105-50KI	文件：140.83 Kbytes Page：18 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, 文件：140.83 Kbytes 頁數(shù)：18 Pages	ISSI 矽成半導(dǎo)體	ISSI

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詳細(xì)參數(shù)

型號(hào)：
IS41
制造商：
ICSI
制造商全稱：
Integrated Circuit Solution Inc
功能描述：
256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市福田區(qū)綠盛電子商行	IS41C16256-60T	ISSI	2015+	DIP/SMD	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市宏捷佳電子科技有限公司	IS41C16256-60T	ISSI	2023+	TSOP	50000	原裝現(xiàn)貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IS41C16256-60TI	ISSI	23+	TSOP	4710	一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價(jià)
深圳市卓越微芯電子有限公司	IS41C16256C-35KLI	ISSI	25+	SOJ40	3850	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市河鋒鑫科技有限公司	IS41C16256C35TLI	ISSI Integrated Silicon Soluti	22+	40TSOP	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市納立科技有限公司	IS41C16256C-35TLI	ISSI	三年內(nèi)		1983	只做原裝正品	詢價(jià)
深圳市昊創(chuàng)電子有限公司	IS41C16256C-35TLI	ISSI/矽成	1240	DRAM/256KX16EDO/TSOP2(40	1692	原裝香港現(xiàn)貨真實(shí)庫存。低價(jià)	詢價(jià)
瀚佳科技(深圳)有限公司	IS41C16256C-35TLI	ISSI, Integrated Silicon Solut	24+	40-TSOP	56200	一級(jí)代理/放心采購	詢價(jià)
深圳市艾宇欣科技有限公司	IS41C16256C-35TLI	ISSI	1931+	N/A	493	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物	詢價(jià)
深圳市科雨電子有限公司	IS41C16256C-35TLI	ISSI	25+	40-TSOP	1001	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)

更多IS41供應(yīng)商更新時(shí)間2026-1-20 17:03:00

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