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          首頁 >IS3>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IS357B

          HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

          DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES ● Marked as FPT1. ● Current Transfer Ratio MIN. 50 ● Isolation Voltage (3.75kVRMS,5.3kVPK) ● All

          文件:58.54 Kbytes 頁數(shù):2 Pages

          ISOCOM

          英國安數(shù)光

          IS357D

          HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATIORS

          DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES ● Marked as FPT1. ● Current Transfer Ratio MIN. 50% ● Isolation Voltage (3.75kVRMS,5.3kVPK) ●

          文件:58.54 Kbytes 頁數(shù):2 Pages

          ISOCOM

          英國安數(shù)光

          IS35ML01G081

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance - R

          文件:1.76532 Mbytes 頁數(shù):56 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML01G081-BLA1

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance - R

          文件:1.76532 Mbytes 頁數(shù):56 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML01G081-BLA2

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance - R

          文件:1.76532 Mbytes 頁數(shù):56 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML01G081-BLE

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance - R

          文件:1.76532 Mbytes 頁數(shù):56 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML01G081-BLI

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance - R

          文件:1.76532 Mbytes 頁數(shù):56 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML01G081-TLA1

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance - R

          文件:1.76532 Mbytes 頁數(shù):56 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML01G081-TLA2

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance - R

          文件:1.76532 Mbytes 頁數(shù):56 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML01G081-TLE

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance - R

          文件:1.76532 Mbytes 頁數(shù):56 Pages

          ISSI

          矽成半導(dǎo)體

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          替代料
          23+
          30000
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
          詢價(jià)
          ISSI(美國芯成)
          25+
          封裝
          500000
          源自原廠成本,高價(jià)回收工廠呆滯
          詢價(jià)
          ISSI, Integrated Silicon Solut
          24+
          44-PowerWFQFN
          39500
          一級(jí)代理/放心采購
          詢價(jià)
          Lumissil
          20+
          QFN-44
          4520
          原裝正品現(xiàn)貨
          詢價(jià)
          ISSI
          25+
          QFN44
          2500
          優(yōu)勢(shì)
          詢價(jià)
          ISSI
          2447
          C0603
          100500
          一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
          詢價(jià)
          ISSI
          21+
          QFN
          20000
          原裝優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)發(fā)票
          詢價(jià)
          ISSI
          25+
          QFN-44
          3854
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價(jià)
          ISSI
          21+
          QFN44
          2086
          詢價(jià)
          NA
          23+
          NA
          26094
          10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè)
          詢價(jià)
          更多IS3供應(yīng)商 更新時(shí)間2026-1-20 16:17:00
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