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          首頁(yè) >IS3>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IS34ML04G084-TLA1

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance -

          文件:1.49971 Mbytes 頁(yè)數(shù):66 Pages

          ISSI

          矽成半導(dǎo)體

          IS34ML04G084-TLA2

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance -

          文件:1.49971 Mbytes 頁(yè)數(shù):66 Pages

          ISSI

          矽成半導(dǎo)體

          IS34ML04G084-TLE

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance -

          文件:1.49971 Mbytes 頁(yè)數(shù):66 Pages

          ISSI

          矽成半導(dǎo)體

          IS34ML04G084-TLI

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance -

          文件:1.49971 Mbytes 頁(yè)數(shù):66 Pages

          ISSI

          矽成半導(dǎo)體

          IS34MW04G084

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          IS34MW04G084-TLA1

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          IS34MW04G084-TLA2

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          IS34MW04G084-TLE

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          IS34MW04G084-TLI

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          IS34MW04G088

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number

          文件:2.095429 Mbytes 頁(yè)數(shù):73 Pages

          ISSI

          矽成半導(dǎo)體

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          替代料
          23+
          30000
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
          詢價(jià)
          ISSI(美國(guó)芯成)
          25+
          封裝
          500000
          源自原廠成本,高價(jià)回收工廠呆滯
          詢價(jià)
          ISSI, Integrated Silicon Solut
          24+
          44-PowerWFQFN
          39500
          一級(jí)代理/放心采購(gòu)
          詢價(jià)
          Lumissil
          20+
          QFN-44
          4520
          原裝正品現(xiàn)貨
          詢價(jià)
          ISSI
          25+
          QFN44
          2500
          優(yōu)勢(shì)
          詢價(jià)
          ISSI
          2447
          C0603
          100500
          一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
          詢價(jià)
          ISSI
          21+
          QFN
          20000
          原裝優(yōu)勢(shì) 實(shí)單必成 可開(kāi)13點(diǎn)發(fā)票
          詢價(jià)
          ISSI
          25+
          QFN-44
          3854
          就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
          詢價(jià)
          ISSI
          21+
          QFN44
          2086
          詢價(jià)
          NA
          23+
          NA
          26094
          10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè)
          詢價(jià)
          更多IS3供應(yīng)商 更新時(shí)間2026-1-20 16:17:00
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