| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRLR014 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件:2.16738 Mbytes 頁數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLR014 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRLR014, SiHLR014) ? Straight lead (IRLU014, SiHLU014) ? Available in tape and reel ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? Fast switching ? Material categorization: for definitions of compliance please see www.v 文件:822.02 Kbytes 頁數(shù):13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLR014 | HEXFET POWER MOSFET
文件:180.89 Kbytes 頁數(shù):6 Pages | IRF | IRF | |
IRLR014 | Power MOSFET 文件:2.24711 Mbytes 頁數(shù):10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLR014 | Power MOSFET 文件:2.24711 Mbytes 頁數(shù):10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLR014 | Power MOSFET Dynamic dV/dt rating\nSurface-mount (IRLR014, SiHLR014)\nStraight lead (IRLU014, SiHLU014); | Vishay 威世 | Vishay | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRLR014, SiHLR014) ? Straight lead (IRLU014, SiHLU014) ? Available in tape and reel ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? Fast switching ? Material categorization: for definitions of compliance please see www.v 文件:822.02 Kbytes 頁數(shù):13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:110.86 Kbytes 頁數(shù):10 Pages | IRF | IRF | ||
HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14廓 , ID = 10A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:281.42 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
HEXFET? Power MOSFET
文件:1.12217 Mbytes 頁數(shù):10 Pages | IRF | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRLR014
- 功能描述:
MOSFET N-Chan 60V 2.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
25+ |
TO252 |
20300 |
INFINEON/英飛凌原裝特價(jià)IRLR014即刻詢購立享優(yōu)惠#長(zhǎng)期有貨 |
詢價(jià) | ||
IR/VISHAY |
TO-252 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價(jià) | |||
IR |
23+ |
TO252 |
10000 |
原廠原裝正品 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
24+ |
TO-252/DPAK |
45000 |
只做全新原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
2450+ |
TO252 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
IR |
24+ |
TO-252 |
276 |
詢價(jià) | |||
IR |
24+/25+ |
50 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
IR |
25+ |
TO-252 |
8000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) |
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