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    首頁
                >IRLL110PBF>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    IRLL110PBF
    Power MOSFET
    
DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq
    文件：1.44194 Mbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRLL110PBF
    HEXFET? Power MOSFET
    
Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.


Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Repetitive Avalan
    文件：203.6 Kbytes 頁數(shù)：8 Pages
    IRF
    

    IRLL110TR
    Power MOSFET
    
DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq
    文件：1.44194 Mbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRLL110TR
    100V N-Channel MOSFET
    
FEATURES
? Surface mount
? Available in tape and reel
? Dynamic dV/dt rating
? Repetitive avalanche rated
? Logic-level gate drive
? RDS(on) specified at VGS = 4 V and 5 V
? Fast switching
? Material categorization: for definitions of compliance
?VDS(V) = 100V
?RDS(ON) 
    文件：694.08 Kbytes 頁數(shù)：8 Pages
    UMW
    友臺半導(dǎo)體
    

    IRLL110TRPBF
    Power MOSFET
    
DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq
    文件：1.44194 Mbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    
            
    
		
        
    
            
    
                
    詳細(xì)參數(shù)
    
            
    
            
      
            	
    • 型號：
      IRLL110PBF
    • 功能描述：
      MOSFET N-Chan 100V 1.5 Amp 
    • RoHS：
      否 
    • 制造商：
      STMicroelectronics 
    • 晶體管極性：
      N-Channel 
    • 汲極/源極擊穿電壓：
      650 V 
    • 閘/源擊穿電壓：
      25 V 
    • 漏極連續(xù)電流：
      130 A 電阻汲極/源極 
    • RDS（導(dǎo)通）：
      0.014 Ohms 
    • 配置：
      Single 
    • 安裝風(fēng)格：
      Through Hole 
    • 封裝/箱體：
      Max247 
    • 封裝：
      Tube 
    
            
    
        
    
            
    供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
    
                
    



    IR
    		

    2024+
    		

    N/A
    		

    70000
    		

    柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
    		
詢價(jià)
    

    



    VISHAY
    		

    07+
    		

    原廠原裝
    		

    130960
    		

    自己公司全新庫存絕對有貨
    		
詢價(jià)
    

    



    IR
    		

    17+
    		

    SOT-223
    		

    6200
    		

    		
詢價(jià)
    

    



    IR
    		

    23+
    		

    SOT-223
    		

    5000
    		

    原裝正品,假一罰十
    		
詢價(jià)
    

    



    IR
    		

    25+
    		

    SOT-223
    		

    2789
    		

    原裝優(yōu)勢!絕對公司現(xiàn)貨!
    		
詢價(jià)
    

    



    IR
    		

    25+
    		

    SOT-223
    		

    90000
    		

    一級代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
    		
詢價(jià)
    

    



    IR
    		

    2026+
    		

    SOT-223
    		

    26217
    		

    全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
    		
詢價(jià)
    

    



    Vishay PCS
    		

    2022+
    		

    		

    7607
    		

    全新原裝 貨期兩周
    		
詢價(jià)
    

    



    IR/VISH
    		

    24+
    		

    		

    65230
    		

    		
詢價(jià)
    

    



    IR
    		

    25+
    		

    SOT-223
    		

    20000
    		

    普通
    		
詢價(jià)
    

            
    
        
    
        
    更多IRLL110PBF供應(yīng)商
            更新時(shí)間2026-1-22 13:00:00
        
    
        
    
          
    
            
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